preliminary TSC10 high voltage npn transistor 1 / 4 version: preliminary to - 92 product summary bv ceo 50 0v bv cbo 98 0v i c 1.5a v ce(sat) 0.5v @ i c / i b = 0.5a / 0.1a features high voltage high speed switching structure silicon triple diffused type npn silicon transistor ordering in formation part no. package packing TSC10ct b0 to - 92 1kpcs / bulk TSC10ct b0g to - 92 1kpcs / bulk TSC10ct a3 to - 92 2kpcs / ammo TSC10ct a3g to - 92 2kpcs / ammo note: g denote for halogen free product block diagram absolute maximum rating ( ta = 25 o c unless otherwi se noted ) parameter symbol limit unit collector - base voltage v cbo 980 v collector - emitter voltage v ceo 500 v emitter - base voltage v ebo 10 v dc 1.5 collector current pulse i c 3 a total power dissipation @ t c =25 c p d tot 1.96 w operating junc tion temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c thermal performance parameter symbol limit unit thermal resistance junction to ambient r? ja 215 o c/w th ermal resistance junction to case r? j c 65 o c/w pin definition : 1. emitter 2. collector 3. base
preliminary TSC10 high voltage npn transistor 2 / 4 version: preliminary electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static collector - base voltage i c = 1ma, i b = 0 bv cbo 98 0 -- -- v collector - em itter breakdown voltage i c = 10ma, i e = 0 bv ceo 50 0 -- -- v emitter - base breakdown voltage i e = 1ma, i c = 0 bv ebo 9 -- -- v collector cutoff current v ces = 98 0v, i e = 0 i c es -- -- 1 0 ua emitter cutoff current v eb 9 v, i c = 0 i ebo -- -- 0.5 ua collec tor - emitter saturation voltage i c / i b = 0.5a / 0.1a i c / i b = 1.0a / 0. 2 5a i c / i b = 1. 5 a / 0.5a v ce(sat)1 v ce(sat)2 v ce(sat) 3 -- -- -- 0.3 0.5 0.9 0.5 1 2 v base - emitter saturation voltage i c / i b = 0.5a / 0.1a i c / i b = 1.0a / 0.25a v be(sat)1 v be(sat) 2 -- -- -- -- 1 1. 2 v dc current gain v ce = 10v, i c = 10ma v ce = 10v, i c = 400ma v ce = 10v, i c = 1a h fe 15 20 6 -- -- -- 40 40 40 dynamic characteristics frequency v ce = 10v, i c = 0.1a f t 4 -- -- mhz output capacitance v cb = 10v, f = 0.1mhz cob -- 21 -- pf resistive load switching time (ratings) delay time t d -- 0.0 5 0.2 us rise time t r -- 1.1 -- us storage time t stg -- 2 4 us fall time v cc = 125v, i c = 1a, i b1 = i b2 = 0.2a, t p = 25us duty cycle 1% t f -- 0.4 0.7 us note: pulse test: pulse width 300us, duty cycle 2%
preliminary TSC10 high voltage npn transistor 3 / 4 version: preliminary to - 92 mechanical drawing to - 92 dim ension millimeters inches dim min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.05 0 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
preliminary TSC10 high voltage npn transistor 4 / 4 version: preliminary notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information containe d herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liabilit y whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other int ellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemn ify tsc for any damages resulting from such improper use or sale.
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